CIS equivalent readout noise
as low as~100uV
Sensitivity per μ m2 pixel
>2.2V/lx • s
peak QE>73%
Multi exposure synthesis technology+40dB
Pixel Dual Conversion
Gain Technology+18dB
Full well expansion technology+6dB
Thick silicon BSI Gen1:
850nm QE>50%, 940nm QE>20%
Thick silicon BSI-Gen2:
850nm QE>60%, 940nm QE>38%
<60mW@1080p/30fps
Power consumption in full frame output mode
<2mW@360p/5fps
No AO mode power consumption
